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2SK1838(L), 2SK1838(S)
Silicon N Channel MOS FET
REJ03G0980-0300 Rev.3.00 Nov 21, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1))
4 D 4 G 1. Gate 2. Drain 3. Source 4. Drain S 1 2 3
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
1
2
3
Rev.3.00 Nov 21, 2005 page 1 of 7
2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 250 30 1 2 1 10 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 30 -- -- 2.0 0.3 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.5 5.5 60 30 5 5 6 10 4.5 0.96 160 Max -- -- 10 50 3.0 -- 8.0 -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A *3 ID = 0.5 A, VGS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 0.5 A, RL = 60
IF = 1 A, VGS = 0 IF = 1 A, VGS = 0, diF/dt = 100 A/s
Rev.3.00 Nov 21, 2005 page 2 of 7
2SK1838(L), 2SK1838(S)
Main Characteristics
Power vs. Temperature Derating
20 10 3
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
15
1 0.3 0.1
D
C
O
PW
pe ra
10
=
1
0 s
s
10
(T
m
s
10
tio
m
c
n
s
(1
25
=
sh o
C )
t)
5
Operation in this area is limited by R DS (on)
0.03
Ta = 25C
0
50
100
150
200
0.01 1 3 10 30 100 300 1000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
1.0
8V 10 V 6V 5V Pulse Test
Typical Transfer Characteristics
1.0
Pulse Test V DS = 10 V
Drain Current ID (A)
Drain Current ID (A)
0.8
0.8
0.6
4.5 V
0.6
0.4
4V
0.4
0.2
V GS = 3.5 V
0.2
Tc = 75C
25C - 25C
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
5
Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50
Pulse Test V GS = 10 V
Drain to Source Saturation Voltage VDS (on) (V)
Static Drain to Source on State Resistance RDS (on) ()
4
20 10 5
3
0.5 A
2
0.2 A
2 1 0.5 0.02
1
ID = 0.1 A
0
4
8
12
16
20
0.05
0.1
0.2
0.5
1
2
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Nov 21, 2005 page 3 of 7
2SK1838(L), 2SK1838(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
25
Pulse Test V GS = 10 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
5
Pulse Test VDS = 10 V
20
2 1
Tc = - 25 C
15
I D = 0.5 A
0.5 0.2 0.1 0.05 0.02
25 C 75 C
10
0.1 A
5
0.2 A
0 - 40
0
40
80
120
160
0.05 0.1
0.2
0.5
1
2
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 1000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time t rr (ns)
500
Capacitance C (pF)
200 100 50
di / dt = 100 A / s V GS = 0, Ta = 25 C
100
Ciss
Coss
10
Crss
20 10 0.05 1 0 10 20
0.1
0.2
0.5
1
2
5
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
500
I D = 0.5 A
Switching Characteristics
20 100
Gate to Source Voltage VGS (V)
V GS
Switching Time t (ns)
400
16
50
tf td (off)
VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 %
300
VDD = 200 V V DS 100 V 50 V
12
20 10 5
200
8
td (on) tr
100
VDD = 200 V 100 V 50 V
4
2 1 0.05
0 0 4 8 12 16 20
0.1
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Nov 21, 2005 page 4 of 7
2SK1838(L), 2SK1838(S)
Reverse Drain Current vs. Source to Drain Voltage
1.0
Reverse Drain Current IDR (A)
Pulse Test
0.8
0.6
0.4
0.2
VGS = 10 V 0, - 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1 Tc = 25C
1.0
0.5
0.3 0.1
0.2 0.1 0.05 0.02
1s hot Pul se
ch - c(t) = s(t) * ch - c ch - c = 12.5C / W. Tc = 25C PW D= T P DM T PW
0.03 0.01 10
0.01
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T RL Vin 10 V 50 Vin Vout 10 %
Waveforms
90 %
10 %
10 %
. . V DD = 30 V
90 % td (on) tr
90 % td (off)
tf
Rev.3.00 Nov 21, 2005 page 5 of 7
2SK1838(L), 2SK1838(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZD-A
Package Name DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.] 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
5.5 0.5
1.2 0.3
3.1 0.5
1.15 0.1 0.8 0.1
16.2 0.5
2.29 0.5
2.29 0.5
0.55 0.1
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name DPAK(S) / DPAK(S)V
MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.3.00 Nov 21, 2005 page 6 of 7
(5.1)
2SK1838(L), 2SK1838(S)
Ordering Information
Part Name 2SK1838L-E 2SK1838STL-E Quantity 3200 pcs 3000 pcs Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Nov 21, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .5.0

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